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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4350 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS For high speed power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 100 100 7 10 0.5 UNIT V V V A A W ae ae Emitter-base voltage Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0 IC=1mA; IE=0; IE=5mA; IC=0; IC=5A; IB=5mA IC=5A; IB=5mA VCB=100V ;IE=0 VEB=7V; IC=0 IC=5A ; VCE=2V 2000 MIN 100 100 7 2SC4350 SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 1.5 2.0 1 5.0 |I V V A mA hFE classifications M L K 2000-5000 CHA IN 4000-10000 8000-20000 E SEM NG OND IC TOR UC 20000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4350 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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